? semiconductor components industries, llc, 2016 may, 2016 ? rev. 2 1 publication order number: bc817?40w/d bc817-40w 45 v, 0.5 a, general purpose npn transistor on semiconductor?s bc817?40w is a general purpose npn transistor that is housed in the sc?70/sot?323 package. features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? this device is pb?free, halogen free/bfr free and is rohs compliant maximum ratings (t a = 25 c) rating symbol value unit collector ? emitter voltage v ceo 45 v collector ? base voltage v cbo 50 v emitter ? base voltage v ebo 5.0 v collector current ? continuous i c 500 madc thermal characteristics characteristic symbol max unit total device dissipation (note 1) p d 460 mw thermal resistance, junction?to?ambient (note 1) r ja 272 c/w junction and storage temperature range t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr?4 board, 1 oz. cu, 100 mm 2 www. onsemi.com collector 3 1 base 2 emitter sc?70 case 419 style 3 marking diagram (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. ce m ce = specific device code m = date code = pb?free package 1 device package shipping ordering information ? bc817?40wt1g sc?70 (pb?free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. nsvbc817?40wt1g sc?70 (pb?free) 3000 / tape & reel
bc817?40w www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = 10 ma) v (vr)ceo 45 ? ? v collector ?emitter breakdown voltage (v eb = 0 v, i c = 10 a) v (vr)ces 50 ? ? v emitter ?base breakdown voltage (i e = 1.0 a) v (vr)ebo 5.0 ? ? v collector cutoff current (v cb = 20 v) (v cb = 20 v, t a = 150 c) i cbo ? ? ? ? 100 5.0 na a on characteristics dc current gain (note 2) (i c = 100 ma, v ce = 1.0 v) (i c = 500 ma, v ce = 1.0 v) h fe 250 40 ? ? 600 ? ? collector ?emitter saturation voltage (note 2) (i c = 500 ma, i b = 50 ma) v ce(sat) ? ? 0.7 v base ?emitter on voltage (note 2) (i c = 500 ma, v ce = 1.0 v) v be(on) ? ? 1.2 v small? signal characteristics current ?gain ? bandwidth product (i c = 10 ma, v ce = 5.0 v, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? 10 ? pf product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse condition: pulse width = 300 sec, duty cycle 2%
bc817?40w www. onsemi.com 3 typical characteristics figure 1. dc current gain vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 0.1 0.01 0.001 0 100 200 300 400 700 1 0.1 0.01 0.001 0.001 0.1 1 figure 3. base emitter saturation voltage vs. collector current figure 4. base emitter voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.8 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.8 0.9 1.0 1.2 h fe , dc current gain v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter voltage (v) 1 v ce = 1 v 150 c ?55 c 25 c i c /i b = 10 150 c ?55 c 25 c 0.4 0.9 i c /i b = 10 150 c ?55 c 25 c 0.4 0.7 1.1 v ce = 5 v 150 c ?55 c 25 c figure 5. current gain bandwidth product vs. collector current i c , collector current (ma) 1000 10 1 0.1 10 100 f t , current?gain?bandwidth product (mhz) v ce = 1 v t a = 25 c 1000 100 500 600 0.01
bc817?40w www. onsemi.com 4 typical characteristics i b , base current (ma) figure 6. saturation region 100 10 1 v r , reverse voltage (volts) figure 7. temperature coefficients +1 i c , collector current (ma) figure 8. capacitances 0.1 1 1 10 100 1000 -2 -1 0 v ce , collector-emitter voltage (volts) v , temperature coefficients (mv/ c) c, capacitance (pf) 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 10 100 1 10 100 t j = 25 c i c = 10 ma vc for v ce(sat) vb for v be c ob c ib 100 ma 300 ma 500 ma figure 9. safe operating area 1 v ce (vdc) 1 0.1 0.1 0.01 10 100 0.01 0.001 i c (a) single pulse test @ t a = 25 c thermal limit 100 ms 1 s 10 ms 1 ms
bc817?40w www. onsemi.com 5 package dimensions sc?70 (sot?323) case 419?04 issue n style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bc817?40w/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
|
